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<H1 ALIGN="CENTER" COLOR="ggg123">Semiconductors</H1>
<H2 ALIGN="CENTER">Normandie Universite, Mesures Physiques, IUT, Université de Caen Normandie, CRISMAT-CNRS, ENSICAEN, Caen - France</H2>
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<P ALIGN="CENTER"><I>Updated 15/01/2018</I>
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<A HREF="http://www-crismat.ensicaen.fr"><IMG SRC="../../logos/logo_crismat.gif" WIDTH="88"><br>Laboratory</A><br><br>
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<P ALIGN="CENTER">Semiconductors<BR></P></H3>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><b>Course</b><BR><A HREF="../semiconductors/content_semiconductors.pdf">Content</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/basics_in_short.pdf">Short basics (Si structure, intrinsic-extrinsic SC<br>Fermi level, charge carriers</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/PN_junction.pdf">PN junction (short)</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Out_of_equilibrium_state.pdf">Out of equilibrium state<br>Diffusion currents</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Generation_recombinaison.pdf">Generation-Recombination<br>Auger effect, Deep levels</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Semiconductor_characterization.pdf">Semiconductor characterization<br>Seebeck, Hall effects</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Impurity_bands_conduction.pdf">Conduction by Impurity bands</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Tetrahedral_structure_rules.pdf">Rules in tetrahedral structures</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Elaboration_techniques.pdf">Elaboration techniques</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Charge_carriers_diffusion.pdf">Charge carriers diffusion</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/PN_junction_depth.pdf">PN junction (in more depth)</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Zenner_LED.pdf">Zenner effect, LED, photodiodes</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Bipolar_transistor.pdf">Bipolar transistor</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Photodiode.pdf">Photodiode</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Si_technology.pdf">Silicon technology</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/PN_junction_properties.pdf">Properties of PN junctions<br>MOS transistor</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Si_process.pdf">Silicon process</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/.pdf"></a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><b>Exercises</b><BR>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Tetrahedral_phases_exos.pdf">Tetrahedral phases</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/NPN_transistor_exos.pdf">NPN transistor</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Non_uniform_doping_exos.pdf">Non-uniform doping <br>in a parallelepiped bar</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Metal_semiconductor_junction.pdf">Metal-semiconductor junction<br>Cu-Si(N)</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/PN_junction_linear_model_exos.pdf">PN junction linear model</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Carrier_concentration_AsGa_exos.pdf">Carrier concentration in AsGa</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/Hall_exos.pdf">Hall effect</a><br>
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<TD WIDTH="20%" HEIGHT="62" ALIGN="CENTER"><A HREF="../semiconductors/.pdf"></a><br>
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